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Ellipsometric study of silicon nitride on gallium arsenideA method for optimizing the sensitivity of ellipsometric measurements for thin dielectric films on semiconductors is described in simple physical terms. The technique is demonstrated for the case of sputtered silicon nitride films on gallium arsenide.
Document ID
19830030594
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Alterovitz, S. A. (Nebraska Univ. Lincoln, NE, United States)
Bu-Abbud, G. H. (Nebraska Univ. Lincoln, NE, United States)
Woollam, J. A. (Nebraska, University Lincoln, NE, United States)
Liu, D. (NASA Lewis Research Center Cleveland, OH, United States)
Chung, Y. (Universal Energy Systems Dayton, OH, United States)
Langer, D. (USAF, Avionics Laboratory, Wright-Patterson AFB OH, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1982
Publication Information
Publication: Applied Physics Communications
Volume: 1
Issue: 2, 19
Subject Category
Solid-State Physics
Accession Number
83A11812
Funding Number(s)
CONTRACT_GRANT: NAG3-154
Distribution Limits
Public
Copyright
Other

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