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Record 86 of 2428
Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon
External Online Source: doi:10.1063/1.330456
Author and Affiliation:
Dharmadhikari, V. S.(New Mexico Univ., Albuquerque, NM, United States)
Grannemann, W. W.(New Mexico, University, Albuquerque, NM, United States)
Abstract: Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.
Publication Date: Dec 01, 1982
Document ID:
19830034860
(Acquired Nov 30, 1995)
Accession Number: 83A16078
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: Journal of Applied Physics; 53; Dec. 198
Publisher Information: United States
Contract/Grant/Task Num: NAG1-95
Financial Sponsor: NASA; United States
Organization Source: New Mexico Univ.; Albuquerque, NM, United States
Description: 5p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: BARIUM TITANATES; FERROELECTRICITY; PHOTOVOLTAIC EFFECT; SILICON FILMS; THIN FILMS; CAPACITANCE; OPEN CIRCUIT VOLTAGE; RADIO FREQUENCY HEATING; SANDWICH STRUCTURES; X RAY DIFFRACTION
Imprint And Other Notes: Journal of Applied Physics, vol. 53, Dec. 1982, p. 8988-8992.
Miscellaneous Notes: p. 8988-8992
Availability Source: Other Sources
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