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Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, ProceedingsThe results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
Document ID
19830036258
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Long, D. M.
(Science Applications, Inc. La Jolla, CA, United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Subject Category
Electronics And Electrical Engineering
Accession Number
83A17476
Distribution Limits
Public
Copyright
Other

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