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Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 CAnnealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.
Document ID
Document Type
Reprint (Version printed in journal)
Danchenko, V.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Fang, P. H.
(Boston College Chestnut Hill, MA, United States)
Brashears, S. S.
(Space Science Services Laurel, MD, United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Subject Category
Electronics And Electrical Engineering
Distribution Limits
No Preview Available