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Record Details

Record 43 of 3442
Single event upset vulnerability of selected 4K and 16K CMOS static RAM's
Author and Affiliation:
Kolasinski, W. A.(Aerospace Corp., Los Angeles, CA, United States)
Koga, R.(Aerospace Corp., Los Angeles, CA, United States)
Blake, J. B.(Aerospace Corp., Space Sciences Laboratory, Los Angeles, CA, United States)
Brucker, G.(RCA, Princeton, NJ, United States)
Pandya, P.(Hughes Aircraft Co., Newport Beach, CA, United States)
Petersen, E.(U.S. Navy, Naval Research Laboratory, Washington, DC, United States)
Price, W.(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, CA, United States)
Abstract: Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.
Publication Date: Dec 01, 1982
Document ID:
19830036321
(Acquired Nov 30, 1995)
Accession Number: 83A17539
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publisher Information: United States
Contract/Grant/Task Num: F04701-81-C-0082
Financial Sponsor: NASA; United States
Organization Source: Aerospace Corp.; Los Angeles, CA, United States
RCA Labs.; Princeton, NJ, United States
Hughes Aircraft Co.; Newport Beach, CA, United States
Naval Research Lab.; Washington, DC, United States
Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 5p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: CMOS; COSMIC RAYS; ELECTRICAL FAULTS; RADIATION EFFECTS; RANDOM ACCESS MEMORY; SPACECRAFT ELECTRONIC EQUIPMENT; ASTRIONICS; COMPUTERIZED SIMULATION; IONIZING RADIATION; MICROELECTRONICS
Imprint And Other Notes: (IEEE, DOD, NASA, and DOE, Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982.) IEEE Transactions on Nuclear Science, vol. NS-29, Dec. 1982, p. 2044-2048. Research supported by the U.S. Defense Nuclear Agency, DARPA, and NASA;
Availability Source: Other Sources
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