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Thermodynamics of silicon nitridation - Effect of hydrogenEquilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.
Document ID
19830036834
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Shaw, N. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Zeleznik, F. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 11, 2013
Publication Date
November 1, 1982
Subject Category
Nonmetallic Materials
Report/Patent Number
ACS PAPER 33-B-80P
Accession Number
83A18052
Distribution Limits
Public
Copyright
Other

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