Effect of Y2O3 and Al2O3 on the oxidation resistance of Si3N4

Oxidation of cold-pressed and sintered Si3N4 containing 15 wt% Y2O3 and 2, 4, 6, and 8% Al2O3 is observed at temperatures as low as 1000 C with IR reflection spectroscopy. Concentrations of Al2O3 in excess of 4% greatly retard the rate of oxidation and alter the mechanism of surface attack by promoting formation of a glassy layer on the surface containing mixed oxynitride bonds. The glassy layer retards heterogeneous attack and reduces the effect of an oxidation transition temperature between 1000 and 1100 C for these materials.