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Theory of silicon superlattices - Electronic structure and enhanced mobilityA realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.
Document ID
19830047492
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Moriarty, J. A.
(Cincinnati Univ. OH, United States)
Krishnamurthy, S.
(Cincinnati, University Cincinnati, OH, United States)
Date Acquired
August 11, 2013
Publication Date
April 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
Subject Category
Solid-State Physics
Accession Number
83A28710
Funding Number(s)
CONTRACT_GRANT: NAG1-204
Distribution Limits
Public
Copyright
Other

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