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Record Details

Record 2 of 7143
Theory of silicon superlattices - Electronic structure and enhanced mobility
External Online Source: doi:10.1063/1.332243
Author and Affiliation:
Moriarty, J. A.(Cincinnati Univ., OH, United States)
Krishnamurthy, S.(Cincinnati, University, Cincinnati, OH, United States)
Abstract: A realistic tight-binding band-structure model of silicon superlattices is formulated and used to study systems of potential applied interest, including periodic layered Si-Si(1-x)Ge(x) heterostructures. The results suggest a possible new mechanism for achieving enhanced transverse carrier mobility in such structures: reduced transverse conductivity effective masses associated with the superlattice band structure. For electrons in 100-line-oriented superlattices, a reduced conductivity mass arises intrinsically from the lower symmetry of the superlattice and its unique effect on the indirect bulk silicon band gap. An order of magnitude estimate of the range of mobility enhancement expected from this mechanism appears to be consistent with preliminary experimental results on Si-Si(1-x)Ge(x) superlattices.
Publication Date: Apr 01, 1983
Document ID:
19830047492
(Acquired Nov 30, 1995)
Accession Number: 83A28710
Subject Category: SOLID-STATE PHYSICS
Document Type: Journal Article
Publication Information: Journal of Applied Physics; 54; Apr. 198
Publisher Information: United States
Contract/Grant/Task Num: NAG1-204
Financial Sponsor: NASA; United States
Organization Source: Cincinnati Univ.; OH, United States
Description: 11p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: ATOMIC STRUCTURE; BAND STRUCTURE OF SOLIDS; CRYSTAL LATTICES; ELECTRON MOBILITY; HETEROJUNCTIONS; SILICON JUNCTIONS; ENERGY GAPS (SOLID STATE); GERMANIUM; LATTICE PARAMETERS
Imprint And Other Notes: Journal of Applied Physics, vol. 54, Apr. 1983, p. 1892-1902.
Miscellaneous Notes: p. 1892-1902
Availability Source: Other Sources
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