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High-performance K-band GaAs power field-effect transistors prepared by molecular beam epitaxyThe maturity of the molecular beam epitaxy (MBE) technique for preparing device quality GaAs material for microwave applications is demonstrated by the excellent performance characteristics of K-band GaAs power field-effect transistors (FETs) fabricated on the MBE wafers. An output power of 710 mW with 4.5-dB gain and 17.7 percent power-added efficiency was achieved at 21 GHz with a 1.26-mm gate width pi-gate device. A similar device with a 0.56-mm gate width produced an output power of 320 mW with 5.0-dB gain and 26.6 percent power-added efficiency at 21 GHz. These are the best results yet reported to date for GaAs power FETs operated in the K-band frequency range.
Document ID
19830052628
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Saunier, P.
(Texas Instruments, Inc. Dallas, TX, United States)
Shih, H. D.
(Texas Instruments Central Research Laboratories Dallas, TX, United States)
Date Acquired
August 11, 2013
Publication Date
June 1, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 42
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
83A33846
Funding Number(s)
CONTRACT_GRANT: NAS3-22886
Distribution Limits
Public
Copyright
Other

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