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Radiation effects on MOS devices - dosimetry, annealing, irradiation sequence, and sourcesThis paper reports on some investigations of dosimetry, annealing, irradiation sequences, and radioactive sources, involved in the determination of radiation effects on MOS devices. Results show that agreement in the experimental and theoretical surface to average doses support the use of thermo-luminescent dosimeters (manganese activated calcium fluoride) in specifying the surface dose delivered to thin gate insulators of MOS devices. Annealing measurements indicate the existence of at least two energy levels,,s or a activation energies, for recovery of soft oxide MOS devices after irradiation by electrons, protons, and gammas. Damage sensitivities of MOS devices were found to be independent of combinations and sequences of radiation type or energies. Comparison of various gamma sources indicated a small dependence of damage sensitivity on the Cobalt facility, but a more significant dependence in the case of the Cesium source. These results were attributed to differences in the spectral content of the several sources.
Document ID
19830054805
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Stassinopoulos, E. G.
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Brucker, G. J.
(RCA David Sarnoff Research Center Princeton, NJ, United States)
Van Gunten, O.
(U.S. National Security Agency Fort Meade, MD, United States)
Knudson, A. R.
(U.S. Navy, Naval Research Laboratory, Washington DC, United States)
Jordan, T. M.
(Experimental and Mathematical Physics Consultants Simi Valley, CA, United States)
Date Acquired
August 11, 2013
Publication Date
June 1, 1983
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-30
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
83A36023
Distribution Limits
Public
Copyright
Other

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