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GaAs integrated digital-to-analogue convertor for control of power dual-gate FETsThe design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analog convertor with an output voltage between -2.8 V and +2.8 V are reported. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
Document ID
19830055261
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Saunier, P. (Texas Instruments, Inc. Dallas, TX, United States)
Kim, B. (Texas Instruments, Inc. Dallas, TX, United States)
Frensley, W. R. (Texas Instruments, Inc. Dallas, TX, United States)
Date Acquired
August 11, 2013
Publication Date
March 3, 1983
Publication Information
Publication: Electronics Letters
Volume: 19
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
83A36479
Funding Number(s)
CONTRACT_GRANT: NAS3-22886
Distribution Limits
Public
Copyright
Other

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