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Cleaning chemistry of InSb(100) molecular beam epitaxy substratesInSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.
Document ID
19830056398
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lewis, B. F.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
ISSN: 0021-8979
Subject Category
Inorganic And Physical Chemistry
Accession Number
83A37616
Funding Number(s)
CONTRACT_GRANT: N00014-82-F-0080
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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