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Oxygen-induced recombination centers in as-grown Czochralski silicon crystalsSimultaneous quantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime are obtained in Czochralski-grown Si crystals employing double laser absorption scanning. It is found that oxygen concentration maxima and minima along the crystal growth direction coincide with lifetime minima and maxima, respectively. Another finding is that the magnitude of oxygen-induced lifetime changes increases dramatically in going from the center to the periphery of the crystal. The findings discussed imply that 'as-grown' oxygen precipitates figure in lifetime-limiting processes.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Nauka, K.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(MIT Cambridge, MA, United States)
Date Acquired
August 11, 2013
Publication Date
August 1, 1983
Publication Information
Publication: Applied Physics Letters
Volume: 43
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
Distribution Limits

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