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Techniques for improving the Si-SiO2 interface characterizationThe two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.
Document ID
19830065057
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Sher, A.
(SRI International Menlo Park, CA, United States)
Hoffman, H. J.
(Lockheed Research Laboratories Palo Alto, CA, United States)
Su, P.
(RCA Technical Center Somerville, NJ, United States)
Tsuo, Y. H.
(Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 11, 2013
Publication Date
September 1, 1983
Publication Information
Publication: Journal of Applied Physics
Volume: 54
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
83A46275
Funding Number(s)
CONTRACT_GRANT: NSG-1385
Distribution Limits
Public
Copyright
Other

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