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An XPS study of silicon/noble metal interfaces - Bonding trends and correlations with the Schottky barrier heightsThis X-ray photoemission (XPS) study demonstrates a correlation of intrinsic TM-Si chemical bond formation with Schottky barrier heights for the near-noble transition metals (TM = Ni, Pd, Pt) and their corresponding silicides (TM2Si and TMSi) on Si(100). It is found that the barrier height correlates with the strength of the TM-Si orbital interaction as well as with the charge density around the Si atom. These observations suggest a dominant role for intrinsic chemical interactions in establishing the Schottky barrier heights in these TM-Si systems.
Document ID
19830066832
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Grunthaner, P. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Madhukar, A.
(Southern California, University Los Angeles, CA, United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1983
Publication Information
Publication: Physica
Volume: 117/118
ISSN: 0378-4363
Subject Category
Solid-State Physics
Accession Number
83A48050
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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