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An EBIC equation for solar cellsWhen an electron beam of a scanning electron microscope (SEM) impinges on an N-P junction, the generation of electron-hole pairs by impact ionization causes a characteristic short circuit current I(sc) to flow. The I(sc), i.e., EBIC (electron beam induced current) depends strongly on the configuration used to investigate the cell's response. In this paper the case where the plane of the junction is perpendicular to the surface is considered. An EBIC equation amenable to numerical computations is derived as a function of cell thickness, source depth, surface recombination velocity, diffusion length, and distance of the junction to the beam-cell interaction point for a cell with an ohmic contact at its back surface. It is shown that the EBIC equation presented here is more general and easier to use than those previously reported. The effects of source depth, ohmic contact, and diffusion length on the normalized EBIC characteristic are discussed.
Document ID
Document Type
Reprint (Version printed in journal)
Luke, K. L. (California State University Long Beach, CA, United States)
Von Roos, O. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 11, 2013
Publication Date
September 1, 1983
Publication Information
Publication: Solid-State Electronics
Volume: 26
ISSN: 0038-1101
Subject Category
Distribution Limits