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Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVDManufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.
Document ID
19840021242
Document Type
Conference Paper
Authors
Yeh, Y. C. M.
(Applied Solar Energy Corp. City of Industry, CA, United States)
Chang, K. I.
(Applied Solar Energy Corp. City of Industry, CA, United States)
Tandon, J.
(Applied Solar Energy Corp. City of Industry, CA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983
Subject Category
Energy Production And Conversion
Accession Number
84N29311
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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