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Cell and defect behavior in lithium-counterdoped solar cellsSome n(+)/p cells in which lithium is introduced as a counterdopant, by ion-implantation, into the cell's boron-doped p-region were studied. To determine if the cells radiation resistance could be significantly improved by lithium counterdoping. Defect behavior was related to cell performance using deep level transient spectroscopy. Results indicate a significantly increased radiation resistance for the lithium counterdoped cells when compared to the boron doped 1 ohm-cm control cell. The increased radiation resistance of the lithium counterdoped cells is due to the complexing of lithium with divacancies and boron. It is speculated that complexing with oxygen and single vacancies also contributes to the increased radiation resistance. Counterdoping silicon with lithium results in a different set of defects.
Document ID
19840021253
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Mehta, S.
(Cleveland State Univ. Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: Space Photovoltaic Res. and Technol. 1983
Subject Category
Energy Production And Conversion
Accession Number
84N29322
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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