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Defect interactions in GaAs single crystalsThe two-sublattice structural configuration of GaAs and deviations from stoichiometry render the generation and interaction of electrically active point defects (and point defect complexes) critically important for device applications and very complex. Of the defect-induced energy levels, those lying deep into the energy band are very effective lifetime ""killers". The level 0.82 eV below the condition band, commonly referred to as EL2, is a major deep level, particularly in melt-grown GaAs. This level is associated with an antisite defect complex (AsGa - VAS). Possible mechanisms of its formation and its annihilation were further developed.
Document ID
19840021254
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1983
Subject Category
Solid-State Physics
Accession Number
84N29323
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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