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Neutron-transmutation-doped germanium bolometersSix slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.
Document ID
19840032672
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Palaio, N. P. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Rodder, M. (California Univ. Berkeley. Lawrence Berkeley Lab, CA, United States)
Haller, E. E. (California, University Lawrence Berkeley Laboratory, Berkeley, CA, United States)
Kreysa, E. (Max-Planck-Institut fuer Radioastronomie Bonn, Germany)
Date Acquired
August 12, 2013
Publication Date
November 1, 1983
Publication Information
Publication: International Journal of Infrared and Millimeter Waves
Volume: 4
ISSN: 0195-9271
Subject Category
INSTRUMENTATION AND PHOTOGRAPHY
Funding Number(s)
CONTRACT_GRANT: NASA ORDER W-14606
CONTRACT_GRANT: DE-AC03-76SF-00098
Distribution Limits
Public
Copyright
Other