Performance and materials aspects of Ge:Be photoconductors

Ge:Be photoconductors have been developed for low photon background applications in the 30 - 50 micron wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approximately 10 to the -6th torr. An optimum detective quantum efficiency of 46 percent at a background flux of 1.5 x 10 to the 8th photons/second (7 x 10 to the -13th W is reported. Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and shallow acceptors.