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EHF low-noise FET receiverExtremely high frequency (EHF) receivers for military and NASA programs must be small, lightweight, and highly reliable. In connection with recent advances in the development of mm-wave FET devices and circuits, a basis has been obtained for the eventual replacement of diode mixer front-ends by FET preamplifiers in receivers up to 94 GHz. By placing a low noise amplifier in front of the mixer it is possible to achieve a lower system noise figure than that found in conventional mm-wave receivers. A broader bandwidth can also be provided. Attention is given to the receiver configuration, a low noise FET amplifier, an image rejection filter, a dual-gate FET mixer, a FET local oscillator, and a FET receiver.
Document ID
19840033042
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Schellenberg, J. M.
(Hughes Aircraft Co. Torrance, CA, United States)
Watkins, E. T.
(Hughes Aircraft Co. Torrance, CA, United States)
Date Acquired
August 12, 2013
Publication Date
November 1, 1983
Publication Information
Publication: Microwave Journal
Volume: 26
ISSN: 0026-2897
Subject Category
Electronics And Electrical Engineering
Accession Number
84A15829
Funding Number(s)
CONTRACT_GRANT: NAS5-25968
Distribution Limits
Public
Copyright
Other

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