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Record Details

Record 19 of 22305
Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays
Author and Affiliation:
Brucker, G. J.(Radiation Effects Consultants, West Long Branch, NJ, United States)
Van Gunten, O.(National Security Agency, Fort Meade, MD, United States)
Stassinopoulos, E. G.(NASA Goddard Space Flight Center, Greenbelt, MD, United States)
Shapiro, P.(National Security Agency, Fort Meade, MD, United States)
August, L. S.(U.S. Navy, Naval Research Laboratory, Washington, DC, United States)
Jordan, T. M.(Experimental and Mathematical Physics Consultants, Simi Valley, CA, United States)
Abstract: This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.
Publication Date: Dec 01, 1983
Document ID:
19840037905
(Acquired Nov 28, 1995)
Accession Number: 84A20692
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: IEEE Transactions on Nuclear Science (ISSN 0018-9499); NS-30; 4157-416
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: National Security Agency; Fort Meade, MD, United States
NASA Goddard Space Flight Center; Greenbelt, MD, United States
Naval Research Lab.; Washington, DC, United States
Experimental and Mathematical Physics Consultants; Santa Monica, CA, United States
Radiation Effects Consultants; West Long Branch, NJ, United States
Description: 5p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: CIRCUIT RELIABILITY; LARGE SCALE INTEGRATION; METAL OXIDE SEMICONDUCTORS; RADIATION DAMAGE; RADIATION HARDENING; ALPHA PARTICLES; ELECTRON IRRADIATION; GAMMA RAYS; PERFORMANCE TESTS; PROTON IRRADIATION; THRESHOLDS; VOLT-AMPERE CHARACTERISTICS
Imprint And Other Notes: (IEEE, U.S. Defense Nuclear Agency, NASA, et al., Annual Conference on Nuclear and Space Radiation Effects, Gatlinburg, TN, July 18-21, 1983) IEEE Transactions on Nuclear Science (ISSN 0018-9499), vol. NS-30, Dec. 1983, p. 4157-4161.
Availability Source: Other Sources
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