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Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma raysThis paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.
Document ID
19840037905
Document Type
Reprint (Version printed in journal)
Authors
Brucker, G. J. (Radiation Effects Consultants West Long Branch, NJ, United States)
Van Gunten, O. (National Security Agency Fort Meade, MD, United States)
Stassinopoulos, E. G. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Shapiro, P. (National Security Agency Fort Meade, MD, United States)
August, L. S. (U.S. Navy, Naval Research Laboratory, Washington DC, United States)
Jordan, T. M. (Experimental and Mathematical Physics Consultants Simi Valley, CA, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1983
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-30
ISSN: 0018-9499
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other