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Single event upset (SEU) of semiconductor devices - A summary of JPL test dataThe data summarized describe single event upset (bit-flips) for 60 device types having data storage elements. The data are from 15 acceleration tests with both protons and heavier ions. Tables are included summarizing the upset threshold data and listing the devices tested for heavy ion induced bit-flip and the devices tested with protons. With regard to the proton data, it is noted that the data are often limited to one proton energy, since the tests were usually motivated by the engineering requirement of comparing similar candidate devices for a system. It is noted that many of the devices exhibited no upset for the given test conditions (the maximum fluence and the maximum proton energy Ep are given for these cases). It is believed, however, that some possibility of upset usually exists because there is a slight chance that the recoil atom may receive up to 10 to 20 MeV of recoil energy (with more energy at higher Ep).
Document ID
19840037946
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Nichols, D. K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Price, W. E.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Malone, C. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1983
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-30
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
84A20733
Distribution Limits
Public
Copyright
Other

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