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Identification of oxygen-related midgap level in GaAsAn oxygen-related deep level ELO was identified in GaAs employing Bridgman-grown crystals with controlled oxygen doping. The activation energy of ELO is almost the same as that of the dominant midgap level: EL2. This fact impedes the identification of ELO by standard deep level transient spectroscopy. However, it was found that the electron capture cross section of ELO is about four times greater than that of EL2. This characteristic served as the basis for the separation and quantitative investigation of ELO employing detailed capacitance transient measurements in conjunction with reference measurements on crystals grown without oxygen doping and containing only EL2.
Document ID
19840039334
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lin, D. G.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Aoyama, T.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
February 1, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 44
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
84A22121
Distribution Limits
Public
Copyright
Other

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