On the behaviour and origin of the major deep level (EL2) in GaAsIn an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.
Document ID
19840040082
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Parsey, J. M. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kaminska, M. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Wada, K. (Massachusetts Inst. of Tech. Cambridge, MA, United States)