Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

Borrego, J. M.; Keeney, R. P.; Bhat, I. B.; Bhat, K. N.; Sundaram, L. G.; Ghandhi, S. K.

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Document ID

19840040328

Document Type

Conference Paper

Authors

Borrego, J. M. (Rensselaer Polytechnic Inst. Troy, NY, United States)

Keeney, R. P. (Rensselaer Polytechnic Inst. Troy, NY, United States)

Bhat, I. B. (Rensselaer Polytechnic Inst. Troy, NY, United States)

Bhat, K. N. (Rensselaer Polytechnic Inst. Troy, NY, United States)

Sundaram, L. G. (Rensselaer Polytechnic Inst. Troy, NY, United States)

Ghandhi, S. K. (Rensselaer Polytechnic Institute, Troy, NY, United States)

Date Acquired

August 12, 2013

Publication Date

January 1, 1982

Subject Category

Funding Number(s)

Distribution Limits

Public

Other

NTRS

NTRS - NASA Technical Reports Server