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Bubble formation in oxide scales on SiCThe oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.
Document ID
19840040902
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Mieskowski, D. M.
(NASA Lewis Research Center; Case Western Reserve University Cleveland, OH, United States)
Mitchell, T. E.
(NASA Lewis Research Center Cleveland, OH, United States)
Heuer, A. H.
(Case Western Reserve University Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: American Ceramic Society, Journal
Volume: 67
ISSN: 0002-7820
Subject Category
Nonmetallic Materials
Report/Patent Number
AD-A225456
Accession Number
84A23689
Funding Number(s)
CONTRACT_GRANT: F49620-78-C-0053
Distribution Limits
Public
Copyright
Other

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