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High efficiency IMPATT diodes for 60 GHz intersatellite link applicationsIntersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. This paper describes the development of high efficiency 60 GHz IMPATT diodes by NASA. These programs are cofunded by the U.S. Air Force, Space Division.
Document ID
19840042546
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Haugland, E. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
AIAA PAPER 84-0767
Accession Number
84A25333
Distribution Limits
Public
Copyright
Other

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