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Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modellingThe photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.
Document ID
19840043241
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/0038-1101(84)90103-5
Authors
Keeney, R. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Sundaram, L. M. G. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Rode, H. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Bhat, I. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Borrego, J. M. (Rensselaer Polytechnic Institute, Troy, NY, United States)
Date Acquired
August 12, 2013
Publication Date
February 1, 1984
Publication Information
Publication: Solid-State Electronics
Volume: 27
ISSN: 0038-1101
Subject Category
Energy Production And Conversion
Accession Number
84A26028
Funding Number(s)
CONTRACT_GRANT: NAG3-188
Distribution Limits
Public
Copyright
Other

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