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Silicon nitride films deposited with an electron beam created plasmaThe electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.
Document ID
19840043698
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Bishop, D. C.
(Colorado State Univ. Fort Collins, CO, United States)
Emery, K. A.
(Colorado State Univ. Fort Collins, CO, United States)
Rocca, J. J.
(Colorado State Univ. Fort Collins, CO, United States)
Thompson, L. R.
(Colorado State Univ. Fort Collins, CO, United States)
Zamani, H.
(Colorado State Univ. Fort Collins, CO, United States)
Collins, G. J.
(Colorado State University Fort Collins, CO, United States)
Date Acquired
August 12, 2013
Publication Date
March 15, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 44
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
84A26485
Distribution Limits
Public
Copyright
Other

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