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High-efficiency V-band GaAs IMPATT diodesDouble-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
Document ID
19840045189
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ma, Y. E. (Hughes Aircraft Co. Torrance, CA, United States)
Benko, E. (Hughes Aircraft Co. Torrance, CA, United States)
Trinh, T. (Hughes Aircraft Co., Electron Dynamics Div., Torrance CA, United States)
Erickson, L. P. (Hughes Aircraft Co. Torrance, CA, United States)
Mattord, T. J. (Perkin-Elmer Corp. Physical Electronics Div., Eden Prairie, MN, United States)
Date Acquired
August 12, 2013
Publication Date
March 1, 1984
Publication Information
Publication: Electronics Letters
Volume: 20
ISSN: 0013-5194
Subject Category
Electronics And Electrical Engineering
Accession Number
84A27976
Distribution Limits
Public
Copyright
Other

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