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A new FET-bipolar combinational power semiconductor switchA novel FET-BJT combinational transistor configuration is proposed and demonstrated using discrete devices. This new transistor features fast switching, very simple drive requirement, elimination of reverse bias second breakdown, and good utilization of semiconductor chip area. Initial results indicate that power hybrid construction of the device is essential to enhance the current rating of the device.
Document ID
19840049506
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chen, D. Y. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Chandrasekaran, S. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Chin, S. A. (Virginia Polytechnic Institute and State University Blacksburg, VA, United States)
Date Acquired
August 12, 2013
Publication Date
March 1, 1984
Publication Information
Publication: IEEE Transactions on Aerospace and Electronic Systems
Volume: AES-20
ISSN: 0018-9251
Subject Category
Electronics And Electrical Engineering
Accession Number
84A32293
Funding Number(s)
CONTRACT_GRANT: NAG3-340
Distribution Limits
Public
Copyright
Other

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