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Increased radiation resistance in lithium-counterdoped silicon solar cellsLithium-counterdoped n(+)p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n(+)p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T less than or equal to 100 C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature aneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.
Document ID
19840052059
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Mehta, S. (Cleveland State University Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
June 1, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 44
ISSN: 0003-6951
Subject Category
ENERGY PRODUCTION AND CONVERSION
Distribution Limits
Public
Copyright
Other