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Uncertainties about the physical electronics of n(+) and p(+) silicon, with applications for solar cellsAfter brief surveys of the significance of n(+) and p(+) silicon for the conversion efficiency of solar cells, the work in this paper is concentrated on uncertainties in the characterization of n(+) and p(+) regions. The topics treated include the quantum density states of the majority carrier band and the position of the Fermi level relative to the edge of this band, the resulting force field on the minority carriers accompanying a space dependence of the energy gap narrowing, and the interpretation of measurements of the energy gap narrowing and the minority carrier diffusivity and mobility. The treatment seeks to show how these uncertainties relate to solar cell design and to estimates of attainable conversion efficiency.
Document ID
19840056983
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lindholm, F. A.
(Florida, University Gainesville, FL, United States)
Date Acquired
August 12, 2013
Publication Date
July 1, 1984
Publication Information
Publication: Solar Cells
Volume: 12
ISSN: 0379-6787
Subject Category
Energy Production And Conversion
Accession Number
84A39770
Distribution Limits
Public
Copyright
Other

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