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One-dimensional thermal modeling of vertical Bridgman-type crystal growthArticles by Naumann (1982) and Jasinski et al. (1983) examined the axial temperature distribution of the charge during vertical Bridgman-type crystal growth. A comparison of their results demonstrates that Naumann's model is applicable for K (ratio of crucible to charge thermal conductivity) equal to or greater than 1 or for small Biot numbers. The Jasinski model provides a correction for larger Biot numbers and is also applicable for small values of K.
Document ID
19840058037
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Jasinski, T.
(MIT Cambridge, MA, United States)
Naumann, R. J.
(NASA Marshall Space Flight Center Space Sciences Laboratory, Huntsville, AL, United States)
Date Acquired
August 12, 2013
Publication Date
January 1, 1984
Publication Information
Publication: Journal of Crystal Growth
Volume: 66
ISSN: 0022-0248
Subject Category
Solid-State Physics
Accession Number
84A40824
Distribution Limits
Public
Copyright
Other

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