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The ZnSe(110) puzzle - Comparison with GaAs(110)The surface structure of monocrystalline ZnSe(110) and of 4-5-nm-thick ZnSe(110) layers epitaxially grown on GaAs(110) is investigated by means of elastic LEED and AES; the results are analyzed using the computer programs and R-factor methods of Duke et al. (1981 and 1983), presented in graphs and tables, and compared to those for GaAs(110). Significant differences are attributed to bond-length-conserving outward rotation of Se and inward rotation of Zn in the top layer, with an angle of 4 deg between the actual plane of the cation-anion chain and the truncated bulk surface. The R intensities measured for ZnSe(110) and GaAs(110) are given as Rx = 0.22 and RI = 0.21 and Rx = 0.24 and RI = 0.16, respectively.
Document ID
19840063312
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Duke, C. B.
(Princeton Univ. NJ, United States)
Paton, A.
(Xerox Corp., Webster Research Center Webster, NY, United States)
Kahn, A.
(Princeton Univ. NJ, United States)
Tu, D.-W.
(Princeton University Princeton, NJ, United States)
Date Acquired
August 12, 2013
Publication Date
September 1, 1984
Publication Information
Publication: Journal of Vacuum Science and Technology B
Volume: 2
ISSN: 0734-211X
Subject Category
Solid-State Physics
Accession Number
84A46099
Funding Number(s)
CONTRACT_GRANT: JPL-956338
Distribution Limits
Public
Copyright
Other

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