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Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAsA striking effect of the Fermi energy on the dislocation density in melt-grown GaAs has been discovered. Thus, a shift of the Fermi energy from 0.1 eV above to 0.2 eV below its intrinsic value (at high temperature, i.e., near 1100 K) increases the dislocation density by as much as five orders of magnitude. The Fermi energy shift was brought about by n-type and p-type doping at a level of about 10 to the 17th per cu cm (under conditions of optimum partial pressure of As, i.e., under optimum melt stoichiometry). This effect must be associated with the fact that the Fermi energy controls the charge state of vacancies (i.e., the occupancy of the associated electronic states) which in turn must control their tendency to coalesce and thus the dislocation density. It appears most likely that gallium vacancies are the critical species.
Document ID
19840066007
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lin, D. G.
(MIT Cambridge, MA, United States)
Aoyama, T.
(Hitachi, Ltd. Hitachi, Ibaraki, Japan; MIT, Cambridge, MA, United States)
Date Acquired
August 12, 2013
Publication Date
September 15, 1984
Publication Information
Publication: Applied Physics Letters
Volume: 45
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
84A48794
Distribution Limits
Public
Copyright
Other

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