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Efficient Process for Making Polycrystalline SiliconSolar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.
Document ID
19850000073
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Mccormick, J. R. (Dow Corning Corp.)
Plahutnik, F. JR. (Dow Corning Corp.)
Sawyer, D. H. (Dow Corning Corp.)
Arvidson, A. N. (Dow Corning Corp.)
Goldfarb, S. M. (Dow Corning Corp.)
Date Acquired
August 12, 2013
Publication Date
June 1, 1985
Publication Information
Publication: NASA Tech Briefs
Volume: 9
Issue: 1
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-16121
Accession Number
85B10073
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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