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Producing Silicon Carbide for Semiconductor DevicesProcesses proposed for production of SiC crystals for use in semiconductors operating at temperatures as high as 900 degrees C. Combination of new processes produce silicon carbide chips containing epitaxial layers. Chips of SiC first grown on porous carbon matrices, then placed in fluidized bed, where additional layer of SiC grows. Processes combined to yield complete process. Liquid crystallization process used to make SiC particles or chips for fluidized-bed process.
Document ID
19850000342
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hsu, G. C.
(Caltech)
Rohatgi, N. K.
(Caltech)
Date Acquired
August 12, 2013
Publication Date
January 1, 1986
Publication Information
Publication: NASA Tech Briefs
Volume: 9
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-16391
Accession Number
85B10342
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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