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Solidification and crystal growth of solid solution semiconducting alloysProblems associated with the solidification and crytal growth of solid-solution semiconducting alloy crystals in a terrestrial environment are described. A detailed description is given of the results for the growth of mercury cadmium telluride (HgCdTe) alloy crystals by directional solidification, because of their considerable technological importance. A series of HgCdTe alloy crystals are grown from pseudobinary melts by a vertical Bridgman method using a wide range of growth rates and thermal conditions. Precision measurements are performed to establish compositional profiles for the crystals. The compositional variations are related to compositional variations in the melts that can result from two-dimensional diffusion or density gradient driven flow effects ahead of the growth interface. These effects are discussed in terms of the alloy phase equilibrium properties, the recent high temperature thermophysical data for the alloys and the highly unusual heat transfer characteristics of the alloy/ampule/furnace system that may readily lead to double diffusive convective flows in a gravitational environment.
Document ID
19850002738
Document Type
Conference Paper
Authors
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Szofran, F. R.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: 2nd Symp. on Space Industrialization
Subject Category
Solid-State Physics
Accession Number
85N11046
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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