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Leakage effects in n-GaAs MESFET with n-GaAs buffer layerWhereas improvement of the interface between the active layer and the buffer layer has been demonstrated, the leakage effects can be important if the buffer layer resistivity is not sufficiently high and/or the buffer layer thickness is not sufficiently small. It was found that two buffer leakage currents exist from the channel under the gate to the source and from drain to the channel in addition to the buffer leakage resistance between drain and source. It is shown that for a 1 micron gate-length n-GaAs MESFET, if the buffer layer resistivity is 12 OHM-CM and the buffer layer thickness h is 2 microns, the performance of the device degrades drastically. It is suggested that h should be below 2 microns.
Document ID
19850020514
Acquisition Source
Legacy CDMS
Document Type
Preprint (Draft being sent to journal)
Authors
Wang, Y. C.
(Howard Univ. Washington, DC, United States)
Bahrami, M.
(Howard Univ. Washington, DC, United States)
Date Acquired
August 12, 2013
Publication Date
September 1, 1983
Publication Information
Publication: Commun. and Logic Systems at Millimeter Wave Freq.
Subject Category
Solid-State Physics
Accession Number
85N28826
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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