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GaAs MESFET with lateral non-uniform dopingAn analytical model of the GaAs MESFET with arbitrary non-uniform doping is presented. Numerical results for linear lateral doping profile are given as a special case. Theoretical considerations predict that better device linearity and improved F(T) can be obtained by using linear lateral doping when doping density increases from source to drain.
Document ID
19850020515
Acquisition Source
Legacy CDMS
Document Type
Preprint (Draft being sent to journal)
Authors
Wang, Y. C. (Howard Univ. Washington, DC, United States)
Bahrami, M. (Howard Univ. Washington, DC, United States)
Date Acquired
August 12, 2013
Publication Date
September 1, 1983
Publication Information
Publication: Commun. and Logic Systems at Millimeter Wave Freq.
Subject Category
Solid-State Physics
Accession Number
85N28827
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19850020512Collected WorksCommunications and logic systems at millimeter wave frequencies
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