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Bipolar-FET combinational power transistors for power conversion applicationsFour bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).
Document ID
19850030518
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chen, D. Y. (Virginia Polytechnic Inst. and State Univ. Blacksburg, VA, United States)
Chin, S. A. (Virginia Polytechnic Institute and State University Blacksburg, VA, United States)
Date Acquired
August 12, 2013
Publication Date
September 1, 1984
Publication Information
Publication: IEEE Transactions on Aerospace and Electronic Systems
Volume: AES-20
ISSN: 0018-9251
Subject Category
Electronics And Electrical Engineering
Accession Number
85A12669
Funding Number(s)
CONTRACT_GRANT: NAG3-40
Distribution Limits
Public
Copyright
Other

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