NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Effect of hot isostatic pressing on reaction-bonded silicon nitrideSpecimens of nearly theoretical density have been obtained through the isostatic hot pressing of reaction-bonded silicon nitride under 138 MPa of pressure for two hours at 1850, 1950, and 2050 C. An amorphous phase that is introduced by the hot isostatic pressing partly accounts for the fact that while room temperature flexural strength more than doubles, the 1200 C flexural strength increases significantly only after pressing at 2050 C.
Document ID
19850033044
Document Type
Reprint (Version printed in journal)
Authors
Watson, G. K. (NASA Lewis Research Center Cleveland, OH, United States)
Moore, T. J. (NASA Lewis Research Center Cleveland, OH, United States)
Millard, M. L. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: American Ceramic Society, Communications
Volume: 67
ISSN: 0002-7820
Subject Category
NONMETALLIC MATERIALS
Funding Number(s)
CONTRACT_GRANT: DE-AI01-77CS-1040
Distribution Limits
Public
Copyright
Other