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mosfet and mos capacitor responses to ionizing radiationThe ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of 'slow' states can interfere with the interface-state measurements.
Document ID
19850036442
Document Type
Reprint (Version printed in journal)
Authors
Benedetto, J. M.
Boesch, H. E., Jr.
(U.S. Army, Harry Diamond Laboratories, Adelphi MD, United States)
Date Acquired
August 12, 2013
Publication Date
December 1, 1984
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: NS-31
ISSN: 0018-9499
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other