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Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon filmsBasic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.
Document ID
19850039888
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lieneweg, U.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Bean, J. C.
(Bell Telephone Laboratories, Inc. Murray Hill, NJ, United States)
Date Acquired
August 12, 2013
Publication Date
October 1, 1984
Publication Information
Publication: Solid-State Electronics
Volume: 27
ISSN: 0038-1101
Subject Category
Electronics And Electrical Engineering
Accession Number
85A22039
Distribution Limits
Public
Copyright
Other

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