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Phase transformations in ion-irradiated silicidesThe present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.
Document ID
19850042515
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Hewett, C. A.
(California Univ., San Diego La Jolla, CA, United States)
Lau, S. S.
(California, University La Jolla, CA, United States)
Suni, I.
(California Institute of Technology Pasadena, CA, United States)
Hung, L. S.
(Cornell University Ithaca, NY, United States)
Date Acquired
August 12, 2013
Publication Date
February 15, 1985
Publication Information
Publication: Journal of Applied Physics
Volume: 57
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
85A24666
Funding Number(s)
CONTRACT_GRANT: NSF DMR-81-06843
Distribution Limits
Public
Copyright
Other

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